Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,72
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 0,72
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Купете в насипно състояние
| количество | Единична цена | Per Ролка |
|---|---|---|
| 100 - 240 | € 0,72 | € 7,20 |
| 250 - 490 | € 0,69 | € 6,90 |
| 500 - 990 | € 0,66 | € 6,60 |
| 1000+ | € 0,417 | € 4,17 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products