Infineon OptiMOS™ 5 N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD025N06NATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
71 nC @ 30 V
Maximum Operating Temperature
+175 °C
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 9,60
€ 2,401 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
4
€ 9,60
€ 2,401 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
4
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
71 nC @ 30 V
Maximum Operating Temperature
+175 °C
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products