Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 5,339
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
€ 5,339
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
10 - 20 | € 5,339 | € 26,69 |
25 - 45 | € 5,024 | € 25,12 |
50 - 120 | € 4,647 | € 23,24 |
125+ | € 4,335 | € 21,67 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm