Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 79,41
€ 1,588 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 79,41
€ 1,588 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
Купете в насипно състояние
| количество | Единична цена | Per Ролка |
|---|---|---|
| 50 - 120 | € 1,588 | € 7,94 |
| 125 - 245 | € 1,485 | € 7,43 |
| 250 - 495 | € 1,38 | € 6,90 |
| 500+ | € 1,275 | € 6,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products