Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Детайли за продукта
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 10,89
€ 5,444 Each (In a Pack of 2) (ex VAT)
Стандарт
2
€ 10,89
€ 5,444 Each (In a Pack of 2) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
2
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 2 - 18 | € 5,444 | € 10,89 |
| 20 - 98 | € 4,643 | € 9,28 |
| 100 - 198 | € 4,023 | € 8,05 |
| 200 - 498 | € 3,807 | € 7,62 |
| 500+ | € 3,41 | € 6,82 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Детайли за продукта
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


