Infineon CoolMOS™ CE N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2

Номер на артикул на RS: 897-7501Марка: Infineon№ по каталога на производителя: IPA50R280CEXKSA2Distrelec Article No.: 30341214
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

550 V

Series

CoolMOS™ CE

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

30.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.65mm

Typical Gate Charge @ Vgs

32.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.9mm

Transistor Material

Si

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.85V

Height

16.15mm

Детайли за продукта

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Информацията за складовите наличности временно не е налична.

€ 6,80

€ 1,359 Each (In a Pack of 5) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2
Изберете тип опаковка

€ 6,80

€ 1,359 Each (In a Pack of 5) (ex VAT)

Infineon CoolMOS™ CE N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

550 V

Series

CoolMOS™ CE

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

30.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.65mm

Typical Gate Charge @ Vgs

32.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.9mm

Transistor Material

Si

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.85V

Height

16.15mm

Детайли за продукта

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more