Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

Номер на артикул на RS: 906-2956Марка: Infineon№ по каталога на производителя: IPA105N15N3GXKSA1Distrelec Article No.: 30341213
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™ 3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

40.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.65mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.15mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Детайли за продукта

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 19,07

€ 4,766 Each (In a Pack of 4) (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

€ 19,07

€ 4,766 Each (In a Pack of 4) (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
4 - 16€ 4,766€ 19,07
20 - 36€ 4,53€ 18,12
40 - 96€ 4,339€ 17,36
100 - 196€ 4,146€ 16,58
200+€ 3,86€ 15,44

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™ 3

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

40.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.65mm

Typical Gate Charge @ Vgs

41 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.15mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Детайли за продукта

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more