Infineon IMZ1 N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1

Номер на артикул на RS: 222-4866Марка: Infineon№ по каталога на производителя: IMZ120R090M1HXKSA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

1200 V

Series

IMZ1

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

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Информацията за складовите наличности временно не е налична.

€ 117,82

€ 3,927 Each (In a Tube of 30) (ex VAT)

Infineon IMZ1 N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1

€ 117,82

€ 3,927 Each (In a Tube of 30) (ex VAT)

Infineon IMZ1 N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

1200 V

Series

IMZ1

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more