Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IMW65R107M1HXKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.142 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 178,86
€ 5,962 Each (In a Tube of 30) (ex VAT)
30
€ 178,86
€ 5,962 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 30 | € 5,962 | € 178,86 |
| 60 - 120 | € 5,664 | € 169,93 |
| 150+ | € 5,426 | € 162,77 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.142 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products