Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.074 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 246,78
€ 8,226 Each (In a Tube of 30) (ex VAT)
30
€ 246,78
€ 8,226 Each (In a Tube of 30) (ex VAT)
Информацията за складовите наличности временно не е налична.
30
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Тръба |
|---|---|---|
| 30 - 30 | € 8,226 | € 246,78 |
| 60 - 60 | € 7,815 | € 234,44 |
| 90+ | € 7,321 | € 219,64 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.074 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products