Infineon IKZ50N65ES5XKSA1 IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
274 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
4
Switching Speed
40kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 22.5mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3100pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.65mJ
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
30
P.O.A.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
274 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
4
Switching Speed
40kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 22.5mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3100pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.65mJ
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products