Infineon 1200V 56A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH20G120C5XKSA1
Технически документи
Спецификации
Brand
InfineonMounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
56A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
2 + Tab
Maximum Forward Voltage Drop
2.6V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
198A
Страна на произход
Malaysia
Детайли за продукта
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 4,407
Each (In a Tube of 500) (ex VAT)
500
€ 4,407
Each (In a Tube of 500) (ex VAT)
500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonMounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
56A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
2 + Tab
Maximum Forward Voltage Drop
2.6V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
198A
Страна на произход
Malaysia
Детайли за продукта
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products