Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1

Номер на артикул на RS: 133-9889Марка: Infineon№ по каталога на производителя: IDH06G65C5XKSA1
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Технически документи

Спецификации

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

6A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

54A

Страна на произход

Malaysia

Детайли за продукта

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

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Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1
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Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

2

Предлагат се на бройка по 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

2

Предлагат се на бройка по 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

6A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

54A

Страна на произход

Malaysia

Детайли за продукта

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more