Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
2.25 kW
Configuration
Single
Package Type
62MM Module
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 36.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Детайли за продукта
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 142,86
Всеки (ex VAT)
1
€ 142,86
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 1 | € 142,86 |
2 - 4 | € 140,00 |
5+ | € 135,72 |
Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
2.25 kW
Configuration
Single
Package Type
62MM Module
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 36.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Детайли за продукта
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.