Infineon FF750R17ME7DPB11BPSA1, P-Channel Dual IGBT, 650 A 1700 V AG-ECONOD, Through Hole
Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Страна на произход
Austria
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€ 388,67
€ 388,67 Всеки (ex VAT)
1
€ 388,67
€ 388,67 Всеки (ex VAT)
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
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Технически документи
Спецификации
Brand
InfineonMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Страна на произход
Austria
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products