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Infineon Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1

Номер на артикул на RS: 277-191Марка: Infineon№ по каталога на производителя: FF1200XTR17T2P5BPSA1
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Технически документи

Спецификации

Channel Type

Dual N

Maximum Continuous Drain Current

1.2 kA

Maximum Drain Source Voltage

1700 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Depletion

Number of Elements per Chip

2

Transistor Material

SiC

Страна на произход

Germany

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Информацията за складовите наличности временно не е налична.

€ 1 100,87

€ 1 100,87 Всеки (ex VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1

€ 1 100,87

€ 1 100,87 Всеки (ex VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

Dual N

Maximum Continuous Drain Current

1.2 kA

Maximum Drain Source Voltage

1700 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Depletion

Number of Elements per Chip

2

Transistor Material

SiC

Страна на произход

Germany

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more