N-Channel MOSFET, 5 A, 250 V, 8-Pin TSDSON Infineon BSZ42DN25NS3GATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
250 V
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
425 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
33.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
4.2 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
OptiMOS 3
Страна на произход
Malaysia
Детайли за продукта
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
5
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
250 V
Package Type
TSDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
425 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
33.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
4.2 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
OptiMOS 3
Страна на произход
Malaysia
Детайли за продукта
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products