P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

Номер на артикул на RS: 892-2217PМарка: Infineon№ по каталога на производителя: BSS84P
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Технически документи

Спецификации

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.24V

Height

0.9mm

Детайли за продукта

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,027

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 250.

Производство -

Предлагат се на бройка по 250.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

250

Предлагат се на бройка по 250
250€ 6,71
500€ 13,43
750€ 20,14
1000€ 26,85
1250€ 33,57
1500€ 40,28
1750€ 46,99
2000€ 53,70
2250€ 60,42
2500€ 67,13
2750€ 73,84
3000€ 80,56
3250€ 87,27
3500€ 93,98
3750€ 100,70

€ 0,027

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 250.

Производство -

Предлагат се на бройка по 250.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

250

Предлагат се на бройка по 250
250€ 6,71
500€ 13,43
750€ 20,14
1000€ 26,85
1250€ 33,57
1500€ 40,28
1750€ 46,99
2000€ 53,70
2250€ 60,42
2500€ 67,13
2750€ 73,84
3000€ 80,56
3250€ 87,27
3500€ 93,98
3750€ 100,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.24V

Height

0.9mm

Детайли за продукта

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more