N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1

Номер на артикул на RS: 826-9285Марка: Infineon№ по каталога на производителя: BSS138NH6433XTMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Number of Elements per Chip

1

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,10

Each (On a Reel of 500) (ex VAT)

N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1

€ 0,10

Each (On a Reel of 500) (ex VAT)

N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
500 - 500€ 0,10€ 50,20
1000 - 2000€ 0,076€ 37,94
2500 - 4500€ 0,07€ 35,02
5000 - 12000€ 0,067€ 33,27
12500+€ 0,061€ 30,36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Number of Elements per Chip

1

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more