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Infineon P-Channel MOSFET, 260 mA, 250 V, 3-Pin SOT-223 BSP92PH6327XTSA1

Номер на артикул на RS: 752-8237PМарка: Infineon№ по каталога на производителя: BSP92PH6327XTSA1
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Технически документи

Спецификации

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Height

1.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Информацията за складовите наличности временно не е налична.

€ 4,81

€ 0,481 Each (Supplied on a Reel) (ex VAT)

Infineon P-Channel MOSFET, 260 mA, 250 V, 3-Pin SOT-223 BSP92PH6327XTSA1
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Производствен пакет (Ролка)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 10.

Производство -

Предлагат се на бройка по 10.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

10

Предлагат се на бройка по 10
10€ 4,81
20€ 9,62
30€ 14,43
40€ 19,24
50€ 24,05
60€ 28,86
70€ 33,67
80€ 38,48
90€ 43,29
100€ 48,11
110€ 52,92
120€ 57,73
130€ 62,54
140€ 67,35
150€ 72,16

€ 4,81

€ 0,481 Each (Supplied on a Reel) (ex VAT)

Infineon P-Channel MOSFET, 260 mA, 250 V, 3-Pin SOT-223 BSP92PH6327XTSA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Производствен пакет (Ролка)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 10.

Производство -

Предлагат се на бройка по 10.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

10

Предлагат се на бройка по 10
10€ 4,81
20€ 9,62
30€ 14,43
40€ 19,24
50€ 24,05
60€ 28,86
70€ 33,67
80€ 38,48
90€ 43,29
100€ 48,11
110€ 52,92
120€ 57,73
130€ 62,54
140€ 67,35
150€ 72,16

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Height

1.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more