Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 Ω
Channel Mode
Depletion
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 473,92
€ 0,474 Each (On a Reel of 1000) (ex VAT)
1000
€ 473,92
€ 0,474 Each (On a Reel of 1000) (ex VAT)
Информацията за складовите наличности временно не е налична.
1000
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 1000 - 1000 | € 0,474 | € 473,92 |
| 2000 - 2000 | € 0,45 | € 450,05 |
| 3000+ | € 0,422 | € 421,64 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 Ω
Channel Mode
Depletion
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products