Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,029
Each (In a Pack of 10) (ex VAT)
10
€ 1,029
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 40 | € 1,029 | € 10,29 |
50 - 90 | € 0,978 | € 9,78 |
100 - 240 | € 0,881 | € 8,81 |
250 - 490 | € 0,792 | € 7,92 |
500+ | € 0,753 | € 7,53 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V