N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

Номер на артикул на RS: 170-2290Марка: Infineon№ по каталога на производителя: BSC12DN20NS3GATMA1
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Height

1.1mm

Series

BSC12DN20NS3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,599

Each (On a Reel of 5000) (ex VAT)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

5000

Предлагат се на бройка по 5000
5000€ 2 994,64
10000€ 5 989,28
15000€ 8 983,91
20000€ 11 978,55
25000€ 14 973,19
30000€ 17 967,82
35000€ 20 962,46
40000€ 23 957,10
45000€ 26 951,74
50000€ 29 946,38
55000€ 32 941,01
60000€ 35 935,65
65000€ 38 930,29
70000€ 41 924,92
75000€ 44 919,56

€ 0,599

Each (On a Reel of 5000) (ex VAT)

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Информацията за складовите наличности временно не е налична.

5000

Предлагат се на бройка по 5000
5000€ 2 994,64
10000€ 5 989,28
15000€ 8 983,91
20000€ 11 978,55
25000€ 14 973,19
30000€ 17 967,82
35000€ 20 962,46
40000€ 23 957,10
45000€ 26 951,74
50000€ 29 946,38
55000€ 32 941,01
60000€ 35 935,65
65000€ 38 930,29
70000€ 41 924,92
75000€ 44 919,56

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Height

1.1mm

Series

BSC12DN20NS3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more