Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,183
Each (In a Pack of 10) (ex VAT)
10
€ 2,183
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 10 | € 2,183 | € 21,83 |
20 - 40 | € 1,834 | € 18,34 |
50 - 90 | € 1,703 | € 17,03 |
100 - 240 | € 1,594 | € 15,94 |
250+ | € 1,463 | € 14,63 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V