N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC035N10NS5ATMA1

Номер на артикул на RS: 171-1985Марка: Infineon№ по каталога на производителя: BSC035N10NS5ATMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Series

BSC035N10NS5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

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€ 2,557

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC035N10NS5ATMA1
Изберете тип опаковка

€ 2,557

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC035N10NS5ATMA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 10€ 2,557€ 25,57
20 - 40€ 2,097€ 20,97
50 - 90€ 1,968€ 19,68
100 - 240€ 1,841€ 18,41
250+€ 1,687€ 16,87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Series

BSC035N10NS5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more