N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.1mm
Series
OptiMOS 5
Minimum Operating Temperature
-55 °C
Детайли за продукта
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,926
Each (In a Pack of 5) (ex VAT)
5
€ 2,926
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 45 | € 2,926 | € 14,63 |
| 50 - 120 | € 2,634 | € 13,17 |
| 125 - 245 | € 2,458 | € 12,29 |
| 250 - 495 | € 2,283 | € 11,41 |
| 500+ | € 2,107 | € 10,54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.1mm
Series
OptiMOS 5
Minimum Operating Temperature
-55 °C
Детайли за продукта
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products