N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSATMA1

Номер на артикул на RS: 171-1961Марка: Infineon№ по каталога на производителя: BSC014N04LSATMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.15mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Series

BSC014N04LS

Minimum Operating Temperature

-55 °C

Height

1.1mm

Forward Diode Voltage

1V

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€ 1,369

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSATMA1
Изберете тип опаковка

€ 1,369

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSATMA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 40€ 1,369€ 13,70
50 - 90€ 1,11€ 11,10
100 - 240€ 1,041€ 10,41
250 - 490€ 0,972€ 9,72
500+€ 0,904€ 9,04

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.15mm

Typical Gate Charge @ Vgs

61 nC @ 10 V

Series

BSC014N04LS

Minimum Operating Temperature

-55 °C

Height

1.1mm

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more