Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Страна на произход
China
Детайли за продукта
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
P.O.A.
Each (On a Reel of 3000) (ex VAT)
3000
P.O.A.
Each (On a Reel of 3000) (ex VAT)
3000
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Страна на произход
China
Детайли за продукта