Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Height
1.5mm
Width
2.5mm
Maximum Power Dissipation
1 W
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Length
4.5mm
Base Current
100mA
Страна на произход
Malaysia
Детайли за продукта
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1000
P.O.A.
1000
Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Height
1.5mm
Width
2.5mm
Maximum Power Dissipation
1 W
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Length
4.5mm
Base Current
100mA
Страна на произход
Malaysia
Детайли за продукта