Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Детайли за продукта
Dual NPN/PNP Transistors, Infineon
Bipolar Transistors, Infineon
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
200
P.O.A.
Стандарт
200
Технически документи
Спецификации
Brand
InfineonTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.9mm
Детайли за продукта