Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Страна на произход
China
€ 11,59
€ 11,59 Всеки (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
1
€ 11,59
€ 11,59 Всеки (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
Информацията за складовите наличности временно не е налична.
1
Информацията за складовите наличности временно не е налична.
| количество | Единична цена |
|---|---|
| 1 - 9 | € 11,59 |
| 10 - 99 | € 10,43 |
| 100 - 499 | € 9,63 |
| 500 - 999 | € 8,92 |
| 1000+ | € 7,99 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Страна на произход
China


