Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Страна на произход
China
€ 69,55
€ 69,55 Всеки (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 202 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1
1
€ 69,55
€ 69,55 Всеки (ex VAT)
Infineon AIM SiC N-Channel MOSFET, 202 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1
Информацията за складовите наличности временно не е налична.
1
Информацията за складовите наличности временно не е налична.
| количество | Единична цена |
|---|---|
| 1 - 9 | € 69,55 |
| 10+ | € 62,60 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Страна на произход
China


