Fuji Electric Super J-MOS N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 FMW30N60S1HF

Номер на артикул на RS: 772-9008Марка: Fuji Electric№ по каталога на производителя: FMW30N60S1HF
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

Super J-MOS

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

220 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.03mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

73 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Страна на произход

Japan

Детайли за продукта

N-Channel Power MOSFET, Super J MOS, Fuji Electric

N-Channel enhancement mode power MOSFETs

- Low on-resistance
- Low noise
- Low switching loss

MOSFET Transistors, Fuji Electric

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Запитване за цена

Fuji Electric Super J-MOS N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 FMW30N60S1HF

Запитване за цена

Fuji Electric Super J-MOS N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 FMW30N60S1HF

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Infineon CoolMOS™ C6 N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1
Запитване за ценаEach (In a Pack of 2) (ex VAT)

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

Super J-MOS

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

220 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.03mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

73 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Страна на произход

Japan

Детайли за продукта

N-Channel Power MOSFET, Super J MOS, Fuji Electric

N-Channel enhancement mode power MOSFETs

- Low on-resistance
- Low noise
- Low switching loss

MOSFET Transistors, Fuji Electric

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Infineon CoolMOS™ C6 N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 IPW60R125C6FKSA1
Запитване за ценаEach (In a Pack of 2) (ex VAT)