Технически документи
Спецификации
Brand
Fuji ElectricMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
M711
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
PRICED TO CLEAR
Yes
Детайли за продукта
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Технически документи
Спецификации
Brand
Fuji ElectricMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
M711
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
PRICED TO CLEAR
Yes
Детайли за продукта
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.