Fuji Electric 2MBI100U4A-120-50 Series IGBT Module, 100 A 1200 V, 7-Pin M232, Panel Mount

Номер на артикул на RS: 462-821Марка: Fuji Electric№ по каталога на производителя: 2MBI100U4A-120-50
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Технически документи

Спецификации

Brand

Fuji Electric

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

540 W

Package Type

M232

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

92 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Детайли за продукта

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Информацията за складовите наличности временно не е налична.

P.O.A.

Fuji Electric 2MBI100U4A-120-50 Series IGBT Module, 100 A 1200 V, 7-Pin M232, Panel Mount

1

Предлагат се на бройка по 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Fuji Electric 2MBI100U4A-120-50 Series IGBT Module, 100 A 1200 V, 7-Pin M232, Panel Mount
Информацията за складовите наличности временно не е налична.

1

Предлагат се на бройка по 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Fuji Electric

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

540 W

Package Type

M232

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

92 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Детайли за продукта

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more