Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Детайли за продукта
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
5.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Детайли за продукта


