N-Channel MOSFET, 2.4 A, 100 V, 3 + Tab-Pin SOT-223 Diodes Inc ZXMN10A11GTA

Номер на артикул на RS: 708-2494PМарка: DiodesZetex№ по каталога на производителя: ZXMN10A11GTA
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

3.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

5.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Minimum Operating Temperature

-55 °C

Height

1.8mm

Детайли за продукта

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Запитване за цена

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 2.4 A, 100 V, 3 + Tab-Pin SOT-223 Diodes Inc ZXMN10A11GTA
Изберете тип опаковка

Запитване за цена

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 2.4 A, 100 V, 3 + Tab-Pin SOT-223 Diodes Inc ZXMN10A11GTA

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

3.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

5.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Minimum Operating Temperature

-55 °C

Height

1.8mm

Детайли за продукта

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more