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Diodes Inc N-Channel MOSFET, 1.7 A, 20 V, 3-Pin SOT-23 ZXM61N02FTA

Номер на артикул на RS: 922-7611Марка: DiodesZetex№ по каталога на производителя: ZXM61N02FTA
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Typical Gate Charge @ Vgs

3.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 556,14

€ 0,185 Each (On a Reel of 3000) (ex VAT)

Diodes Inc N-Channel MOSFET, 1.7 A, 20 V, 3-Pin SOT-23 ZXM61N02FTA

€ 556,14

€ 0,185 Each (On a Reel of 3000) (ex VAT)

Diodes Inc N-Channel MOSFET, 1.7 A, 20 V, 3-Pin SOT-23 ZXM61N02FTA
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Typical Gate Charge @ Vgs

3.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more