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Diodes Inc N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line ZVN3306A

Номер на артикул на RS: 655-543Марка: DiodesZetex№ по каталога на производителя: ZVN3306A
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

270 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

625 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 3,54

€ 0,709 Each (In a Pack of 5) (ex VAT)

Diodes Inc N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line ZVN3306A
Изберете тип опаковка

€ 3,54

€ 0,709 Each (In a Pack of 5) (ex VAT)

Diodes Inc N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line ZVN3306A
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
5 - 35€ 0,709€ 3,54
40 - 195€ 0,419€ 2,10
200 - 995€ 0,366€ 1,83
1000 - 1995€ 0,316€ 1,58
2000+€ 0,261€ 1,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

270 mA

Maximum Drain Source Voltage

60 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

625 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Maximum Operating Temperature

+150 °C

Height

4.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more