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Diodes Inc P-Channel MOSFET, 7.2 A, 40 V, 8-Pin PowerDI3333-8 DMP4025SFG-7

Номер на артикул на RS: 122-1511Марка: DiodesZetex№ по каталога на производителя: DMP4025SFG-7
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

40 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

810 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.35mm

Length

3.35mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 368,42

€ 0,184 Each (On a Reel of 2000) (ex VAT)

Diodes Inc P-Channel MOSFET, 7.2 A, 40 V, 8-Pin PowerDI3333-8 DMP4025SFG-7

€ 368,42

€ 0,184 Each (On a Reel of 2000) (ex VAT)

Diodes Inc P-Channel MOSFET, 7.2 A, 40 V, 8-Pin PowerDI3333-8 DMP4025SFG-7
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

40 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

810 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.35mm

Length

3.35mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more