Diodes Inc Dual P-Channel MOSFET, 5.8 A, 40 V, 8-Pin SOIC DMP4025LSD-13

Номер на артикул на RS: 823-4030Марка: DiodesZetex№ по каталога на производителя: DMP4025LSD-13
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

2.14 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 7,18

€ 0,718 Each (In a Pack of 10) (ex VAT)

Diodes Inc Dual P-Channel MOSFET, 5.8 A, 40 V, 8-Pin SOIC DMP4025LSD-13
Изберете тип опаковка

€ 7,18

€ 0,718 Each (In a Pack of 10) (ex VAT)

Diodes Inc Dual P-Channel MOSFET, 5.8 A, 40 V, 8-Pin SOIC DMP4025LSD-13

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 20€ 0,718€ 7,18
30 - 120€ 0,522€ 5,22
130 - 620€ 0,434€ 4,34
630 - 1240€ 0,416€ 4,16
1250+€ 0,408€ 4,08

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

2.14 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more