Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 7,18
€ 0,718 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 7,18
€ 0,718 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 20 | € 0,718 | € 7,18 |
| 30 - 120 | € 0,522 | € 5,22 |
| 130 - 620 | € 0,434 | € 4,34 |
| 630 - 1240 | € 0,416 | € 4,16 |
| 1250+ | € 0,408 | € 4,08 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


