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Diodes Inc P-Channel MOSFET, 11 A, 40 V, 3-Pin DPAK DMP4015SK3-13

Номер на артикул на RS: 122-2890Марка: DiodesZetex№ по каталога на производителя: DMP4015SK3-13
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

3.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.7mm

Typical Gate Charge @ Vgs

47.5 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.39mm

Страна на произход

Taiwan, Province Of China

Детайли за продукта

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 789,04

€ 0,316 Each (On a Reel of 2500) (ex VAT)

Diodes Inc P-Channel MOSFET, 11 A, 40 V, 3-Pin DPAK DMP4015SK3-13

€ 789,04

€ 0,316 Each (On a Reel of 2500) (ex VAT)

Diodes Inc P-Channel MOSFET, 11 A, 40 V, 3-Pin DPAK DMP4015SK3-13
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

3.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.7mm

Typical Gate Charge @ Vgs

47.5 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.39mm

Страна на произход

Taiwan, Province Of China

Детайли за продукта

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more