Diodes Inc P-Channel MOSFET, 21 A, 30 V, 8-Pin PowerDI5060-8 DMP34M4SPS-13

Номер на артикул на RS: 182-6918Марка: DiodesZetex№ по каталога на производителя: DMP34M4SPS-13
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDI5060-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

5.1mm

Length

6mm

Typical Gate Charge @ Vgs

127 nC @ 10V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 1 101,59

€ 0,441 Each (On a Reel of 2500) (ex VAT)

Diodes Inc P-Channel MOSFET, 21 A, 30 V, 8-Pin PowerDI5060-8 DMP34M4SPS-13

€ 1 101,59

€ 0,441 Each (On a Reel of 2500) (ex VAT)

Diodes Inc P-Channel MOSFET, 21 A, 30 V, 8-Pin PowerDI5060-8 DMP34M4SPS-13
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDI5060-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

5.1mm

Length

6mm

Typical Gate Charge @ Vgs

127 nC @ 10V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more