Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.08 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 126,74
€ 0,211 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
600
€ 126,74
€ 0,211 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
600
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 600 - 1450 | € 0,211 | € 10,56 |
| 1500+ | € 0,206 | € 10,28 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.08 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


