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Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7

Номер на артикул на RS: 751-4262PМарка: DiodesZetex№ по каталога на производителя: DMP3056LDM-7
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

21.1 nC @ 10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.3mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 34,85

€ 0,232 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7
Изберете тип опаковка

€ 34,85

€ 0,232 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 DMP3056LDM-7
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
150 - 725€ 0,232€ 5,81
750 - 1475€ 0,207€ 5,16
1500+€ 0,188€ 4,69

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

21.1 nC @ 10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.3mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more