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Diodes Inc P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7

Номер на артикул на RS: 182-7329PМарка: DiodesZetex№ по каталога на производителя: DMP21D6UFD-7
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Length

1.25mm

Typical Gate Charge @ Vgs

0.8 nC @ 8V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.25mm

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 11,03

€ 0,055 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7
Изберете тип опаковка

€ 11,03

€ 0,055 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
200 - 400€ 0,055€ 5,52
500 - 900€ 0,045€ 4,46
1000 - 1900€ 0,04€ 3,99
2000+€ 0,038€ 3,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Length

1.25mm

Typical Gate Charge @ Vgs

0.8 nC @ 8V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.25mm

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more