Diodes Inc P-Channel MOSFET, 8 A, 20 V, 8-Pin SOP DMP2022LSS-13

Номер на артикул на RS: 822-2615Марка: DiodesZetex№ по каталога на производителя: DMP2022LSS-13
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Width

3.95mm

Number of Elements per Chip

1

Length

4.95mm

Typical Gate Charge @ Vgs

56.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Детайли за продукта

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Запитване за цена

Each (In a Pack of 25) (ex VAT)

Diodes Inc P-Channel MOSFET, 8 A, 20 V, 8-Pin SOP DMP2022LSS-13
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 25) (ex VAT)

Diodes Inc P-Channel MOSFET, 8 A, 20 V, 8-Pin SOP DMP2022LSS-13

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Width

3.95mm

Number of Elements per Chip

1

Length

4.95mm

Typical Gate Charge @ Vgs

56.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Детайли за продукта

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more