P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7

Номер на артикул на RS: 822-2611Марка: DiodesZetex№ по каталога на производителя: DMP2008UFG-7
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Width

3.35mm

Minimum Operating Temperature

-55 °C

Height

0.85mm

Детайли за продукта

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,565

Each (In a Pack of 25) (ex VAT)

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Изберете тип опаковка

€ 0,565

Each (In a Pack of 25) (ex VAT)

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
25 - 375€ 0,565€ 14,12
400 - 975€ 0,323€ 8,07
1000+€ 0,249€ 6,23

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Width

3.35mm

Minimum Operating Temperature

-55 °C

Height

0.85mm

Детайли за продукта

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more