Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Width
3.35mm
Minimum Operating Temperature
-55 °C
Height
0.85mm
Детайли за продукта
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,565
Each (In a Pack of 25) (ex VAT)
25
€ 0,565
Each (In a Pack of 25) (ex VAT)
25
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 375 | € 0,565 | € 14,12 |
400 - 975 | € 0,323 | € 8,07 |
1000+ | € 0,249 | € 6,23 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
72 nC @ 4.5 V
Width
3.35mm
Minimum Operating Temperature
-55 °C
Height
0.85mm
Детайли за продукта