Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 30,69
€ 0,061 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
500
€ 30,69
€ 0,061 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
500
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 500 - 900 | € 0,061 | € 6,14 |
| 1000 - 1400 | € 0,044 | € 4,43 |
| 1500 - 2900 | € 0,039 | € 3,86 |
| 3000+ | € 0,035 | € 3,52 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта


