Diodes Inc Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 DMN63D8LDW-7

Номер на артикул на RS: 822-2598PМарка: DiodesZetex№ по каталога на производителя: DMN63D8LDW-7
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 30,69

€ 0,061 Each (Supplied on a Reel) (ex VAT)

Diodes Inc Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 DMN63D8LDW-7
Изберете тип опаковка

€ 30,69

€ 0,061 Each (Supplied on a Reel) (ex VAT)

Diodes Inc Dual N-Channel MOSFET, 260 mA, 30 V, 6-Pin SOT-363 DMN63D8LDW-7

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
500 - 900€ 0,061€ 6,14
1000 - 1400€ 0,044€ 4,43
1500 - 2900€ 0,039€ 3,86
3000+€ 0,035€ 3,52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more