Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Детайли за продукта
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
25
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
25
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Детайли за продукта


