Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
30 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
1.05mm
Maximum Operating Temperature
+150 °C
Width
0.65mm
Transistor Material
Si
Height
0.35mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Запитване за цена
Each (In a Pack of 50) (ex VAT)
Стандарт
50
Запитване за цена
Each (In a Pack of 50) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
50
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
30 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
1.05mm
Maximum Operating Temperature
+150 °C
Width
0.65mm
Transistor Material
Si
Height
0.35mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


